CG2H40045P Product Introduction:
Cree/Wolfspeed Part Number CG2H40045P(Transistors - FETs, MOSFETs - RF), developed and manufactured by Cree/Wolfspeed, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
CG2H40045P is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the Cree/Wolfspeed CG2H40045P, a cutting-edge power module designed to revolutionize the world of power electronics. This high-performance module combines the expertise of Cree and Wolfspeed to deliver unparalleled power density and efficiency.
The CG2H40045P boasts a compact and lightweight design, making it ideal for a wide range of applications. With a voltage rating of 450V and a current rating of 400A, this module is capable of handling high-power requirements with ease. Its low on-resistance and low switching losses ensure minimal power dissipation, resulting in higher energy efficiency and reduced operating costs.
Equipped with advanced silicon carbide (SiC) technology, the CG2H40045P offers superior thermal conductivity and high-temperature stability. This enables it to operate reliably even in harsh environments, making it suitable for demanding applications such as electric vehicles, renewable energy systems, and industrial power supplies.
The CG2H40045P also features a built-in gate driver, simplifying the design and reducing the overall system complexity. Its comprehensive protection features, including overcurrent and overtemperature protection, ensure the safety and longevity of the module and the connected devices.
With the Cree/Wolfspeed CG2H40045P, you can expect exceptional performance, reliability, and efficiency in your power electronics applications. Experience the future of power modules with the CG2H40045P and unlock new possibilities in your projects.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
BA159 Diodes: Introduction, Equivalents and Pinouts
Standard Diode Rectifiers Fast Recovery =< 500ns, > 200mA (Io) 1.3V @ 40V -65°C~125°C 2 Terminal Tape and Box (TB) DO-204AL, DO-41, Axial Through Hole
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