CG2H80045D-GP4 Product Introduction:
Cree/Wolfspeed Part Number CG2H80045D-GP4(Transistors - FETs, MOSFETs - RF), developed and manufactured by Cree/Wolfspeed, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
CG2H80045D-GP4 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the Cree/Wolfspeed CG2H80045D-GP4, a cutting-edge power module designed to revolutionize the world of power electronics. This high-performance module combines the expertise of Cree and Wolfspeed to deliver unparalleled efficiency and reliability.
The CG2H80045D-GP4 boasts a range of impressive features that set it apart from traditional power modules. With a voltage rating of 800V and a current rating of 45A, this module offers exceptional power density and performance. Its low on-resistance and fast switching capabilities ensure minimal power loss and maximum efficiency, making it ideal for a wide range of applications.
This power module is specifically designed for use in electric vehicles, renewable energy systems, and industrial applications. Its robust construction and advanced thermal management system enable it to withstand harsh operating conditions, ensuring long-term reliability and durability. The CG2H80045D-GP4 also features a compact and lightweight design, making it easy to integrate into existing systems.
With the Cree/Wolfspeed CG2H80045D-GP4, you can expect superior performance, increased efficiency, and enhanced reliability. Whether you are developing electric vehicles, renewable energy systems, or industrial machinery, this power module is the perfect choice to meet your power electronics needs. Experience the future of power electronics with the Cree/Wolfspeed CG2H80045D-GP4.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
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The 1N4007 rectifier diode belongs to a series of high-power rectifier diodes made of silicon materials. Its main feature is that it can withstand high peak reverse voltage and average rectifier current. Specifically, the maximum peak reverse voltage (VRM) of 1N4007 is 1000V, the average rectifier current (IF(AV)) is 1A, and it operates in the temperature range of -65°C to +175°C. In addition, its forward voltage drop (VF) is about 1V at high current, with good thermal stability, and can work st
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