CMZ5920B TR13 Product Introduction:
Central Semiconductor Corp Part Number CMZ5920B TR13(Diodes - Zener - Single), developed and manufactured by Central Semiconductor Corp, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
CMZ5920B TR13 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the CMZ5920B TR13, a cutting-edge product from Central Semiconductor Corp that is set to revolutionize the electronics industry. This high-performance, surface mount Zener diode offers a wide range of features that make it an ideal choice for various applications.
The CMZ5920B TR13 boasts a voltage range of 3.3V to 200V, making it suitable for a wide range of voltage regulation needs. With a low leakage current and excellent stability, this diode ensures precise and reliable voltage control in even the most demanding environments.
One of the standout features of the CMZ5920B TR13 is its high power dissipation capability. With a power rating of 1.5W, this diode can handle high power loads without compromising on performance. This makes it perfect for applications that require efficient power management, such as power supplies, voltage regulators, and battery charging circuits.
Furthermore, the CMZ5920B TR13 is designed to be compact and easy to integrate into existing circuit designs. Its surface mount package allows for easy installation and saves valuable board space, making it an ideal choice for space-constrained applications.
With its exceptional performance and versatile features, the CMZ5920B TR13 is suitable for a wide range of application fields, including telecommunications, automotive electronics, industrial control systems, and consumer electronics. Whether you need precise voltage regulation or efficient power management, the CMZ5920B TR13 is the perfect solution for your electronic design needs.
Zener-single refers to a circuit design that focuses on stabilizing the voltage at a particular node in the circuit by carefully configuring a Zener diode as a voltage reference or protection element, and the design focuses on dealing with voltage fluctuations in a Single direction (forward or reverse, depending on the application). Zener diode with its unique reverse breakdown characteristic, after reaching a specific reverse voltage, the current increases significantly while the voltage remains almost unchanged, this characteristic is cleverly used in Zener-single design to achieve voltage stability or overload protection of the circuit.
Application
Zener-Single has a wide range of applications in several electronic engineering fields. In power supply design, it is often used to build a simple voltage regulator circuit to provide a stable power supply voltage for sensitive components such as microprocessors and sensors. In communication systems, especially where the signal level needs to be precisely controlled, such as digital logic circuits, RF front ends, etc., Zener-single can effectively prevent signal distortion caused by voltage fluctuations. In addition, the application of Zener diodes as overvoltage protection components in automotive electronics, industrial control and consumer electronics products also reflects the importance of Zener-single in protecting circuits from unexpected voltage shocks.
NSR05T40P2T5G: Analysis, Manufacturer, Datasheet
In today's digital age, network services have become an integral part of every industry. Whether it's for enterprise applications or personal daily use, we all rely on high-speed, stable network connections. In this field, NSR05T40P2T5G, as an advanced network service technology, is gradually becoming the cornerstone of next-generation network services.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors