Central Semiconductor Corp CP307V-2N5308-WN
- CP307V-2N5308-WN
- Central Semiconductor Corp
- POWER TRANSISTOR NPN DIE
- Transistors - Bipolar (BJT) - Single
- CP307V-2N5308-WN Datasheet
- Die
- Bulk
- Lead free / RoHS Compliant
- 2112
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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Part Number CP307V-2N5308-WN |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Central Semiconductor Corp |
Description POWER TRANSISTOR NPN DIE |
Package Bulk |
Series - |
Operating Temperature -65°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case Die |
Supplier Device Package Die |
Power - Max - |
Transistor Type NPN - Darlington |
Current - Collector (Ic) (Max) 300 mA |
Voltage - Collector Emitter Breakdown (Max) 40 V |
Vce Saturation (Max) @ Ib, Ic 1.4V @ 200µA, 200mA |
Current - Collector Cutoff (Max) 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 7000 @ 2mA, 5V |
Frequency - Transition 60MHz |
Package_case Die |
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