CP327V-2N5308-CT

Central Semiconductor Corp CP327V-2N5308-CT

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  • CP327V-2N5308-CT
  • Central Semiconductor Corp
  • POWER TRANSISTOR NPN DIE
  • Transistors - Bipolar (BJT) - Single
  • CP327V-2N5308-CT Datasheet
  • Die
  • Tray
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 6575
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
CP327V-2N5308-CT
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
Central Semiconductor Corp
Description
POWER TRANSISTOR NPN DIE
Package
Tray
Series
-
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Power - Max
-
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
300 mA
Voltage - Collector Emitter Breakdown (Max)
40 V
Vce Saturation (Max) @ Ib, Ic
1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
7000 @ 2mA, 5V
Frequency - Transition
60MHz
Package_case
Die

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