Texas Instruments CSD23202W10T
- CSD23202W10T
- Texas Instruments
- MOSFET P-CH 12V 2.2A 4DSBGA
- Transistors - FETs, MOSFETs - Single
- CSD23202W10T Datasheet
- 4-UFBGA, DSBGA
- Tape & Reel (TR)
-
Lead free / RoHS Compliant
- 16356
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number CSD23202W10T |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Texas Instruments |
Description MOSFET P-CH 12V 2.2A 4DSBGA |
Package Tape & Reel (TR) |
Series NexFET™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 4-UFBGA, DSBGA |
Supplier Device Package 4-DSBGA (1x1) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1W (Ta) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 12 V |
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) |
Rds On (Max) @ Id, Vgs 53mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds 512 pF @ 6 V |
Vgs (Max) -6V |
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V |
Package_case 4-UFBGA, DSBGA |
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