DF200R12W1H3B27BOMA1

Infineon Technologies DF200R12W1H3B27BOMA1

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  • DF200R12W1H3B27BOMA1
  • Infineon Technologies
  • IGBT MOD 1200V 30A 375W
  • Transistors - IGBTs - Modules
  • DF200R12W1H3B27BOMA1 Datasheet
  • Module
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4323
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
DF200R12W1H3B27BOMA1
Category
Transistors - IGBTs - Modules
Manufacturer
Infineon Technologies
Description
IGBT MOD 1200V 30A 375W
Package
Bulk
Series
-
Operating Temperature
-40°C ~ 150°C
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Power - Max
375 W
Configuration
2 Independent
Current - Collector (Ic) (Max)
30 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector Cutoff (Max)
1 mA
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
1.3V @ 15V, 30A
Input Capacitance (Cies) @ Vce
2 nF @ 25 V
Input
Standard
NTC Thermistor
Yes
Package_case
Module

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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