DMG3415UFY4Q-7

Diodes Incorporated DMG3415UFY4Q-7

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  • DMG3415UFY4Q-7
  • Diodes Incorporated
  • MOSFET P-CH 16V 2.5A X2-DFN2015
  • Transistors - FETs, MOSFETs - Single
  • DMG3415UFY4Q-7 Datasheet
  • 3-XDFN
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2665
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
DMG3415UFY4Q-7
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Diodes Incorporated
Description
MOSFET P-CH 16V 2.5A X2-DFN2015
Package
Tape & Reel (TR)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
3-XDFN
Supplier Device Package
X2-DFN2015-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
650mW (Ta)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
16 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Rds On (Max) @ Id, Vgs
39mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
282 pF @ 10 V
Vgs (Max)
±8V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Package_case
3-XDFN

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Diodes Incorporated
Diodes Incorporated
Diodes Incorporated - Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. In November 2015, Pericom Semiconductor became ...
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