Diodes Incorporated DMT3009LFVWQ-13
- DMT3009LFVWQ-13
- Diodes Incorporated
- MOSFET N-CH 30V 12A PWRDI3333
- Transistors - FETs, MOSFETs - Single
- DMT3009LFVWQ-13 Datasheet
- 8-PowerVDFN
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 4065
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number DMT3009LFVWQ-13 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Diodes Incorporated |
Description MOSFET N-CH 30V 12A PWRDI3333 |
Package Cut Tape (CT) |
Series Automotive, AEC-Q101 |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount, Wettable Flank |
Package / Case 8-PowerVDFN |
Supplier Device Package PowerDI3333-8 (SWP) Type UX |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.3W (Ta), 35.7W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 50A (Tc) |
Rds On (Max) @ Id, Vgs 11mOhm @ 14.4A, 10V |
Vgs(th) (Max) @ Id 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 823 pF @ 15 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 3.8V, 10V |
Package_case 8-PowerVDFN |
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