EPC EPC2102ENG
- EPC2102ENG
- EPC
- TRANS GAN 2N-CH 60V BUMPED DIE
- Transistors - FETs, MOSFETs - Arrays
- EPC2102ENG Datasheet
- Die
- Die
-
Lead free / RoHS Compliant
- 2072
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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Part Number EPC2102ENG |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer EPC |
Description TRANS GAN 2N-CH 60V BUMPED DIE |
Package Die |
Series eGaN? |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case Die |
Supplier Device Package Die |
FET Type 2 N-Channel (Half Bridge) |
FET Feature GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) 60V |
Current - Continuous Drain (Id) @ 25°C 23A |
Rds On (Max) @ Id, Vgs 4.4 mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id 2.5V @ 7mA |
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 30V |
Package_case Die |
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