EPC2106ENGRT

EPC EPC2106ENGRT

The picture is for reference only, please refer to the product specification

  • EPC2106ENGRT
  • EPC
  • GAN TRANS 2N-CH 100V BUMPED DIE
  • Transistors - FETs, MOSFETs - Arrays
  • EPC2106ENGRT Datasheet
  • Die
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2827
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
EPC2106ENGRT
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
EPC
Description
GAN TRANS 2N-CH 100V BUMPED DIE
Package
Cut Tape (CT)
Series
eGaN®
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Power - Max
-
FET Type
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
1.7A
Rds On (Max) @ Id, Vgs
70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id
2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs
0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
75pF @ 50V
Package_case
Die

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