EPC EPC2110ENGRT
- EPC2110ENGRT
- EPC
- GAN TRANS 2N-CH 120V BUMPED DIE
- Transistors - FETs, MOSFETs - Arrays
- EPC2110ENGRT Datasheet
- Die
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 1076
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number EPC2110ENGRT |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer EPC |
Description GAN TRANS 2N-CH 120V BUMPED DIE |
Package Jinftry-Reel® |
Series eGaN® |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case Die |
Supplier Device Package Die |
Power - Max - |
FET Type 2 N-Channel (Dual) Common Source |
FET Feature GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) 120V |
Current - Continuous Drain (Id) @ 25°C 3.4A |
Rds On (Max) @ Id, Vgs 60mOhm @ 4A, 5V |
Vgs(th) (Max) @ Id 2.5V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V |
Package_case Die |
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