ES1JL R3G

Taiwan Semiconductor Corporation ES1JL R3G

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  • ES1JL R3G
  • Taiwan Semiconductor Corporation
  • DIODE GEN PURP 600V 1A SUB SMA
  • Diodes - Rectifiers - Single
  • ES1JL R3G Datasheet
  • DO-219AB
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1953
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
ES1JL R3G
Category
Diodes - Rectifiers - Single
Manufacturer
Taiwan Semiconductor Corporation
Description
DIODE GEN PURP 600V 1A SUB SMA
Package
Bulk
Series
-
Mounting Type
Surface Mount
Package / Case
DO-219AB
Supplier Device Package
Sub SMA
Diode Type
Standard
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 1 A
Current - Reverse Leakage @ Vr
5 µA @ 600 V
Capacitance @ Vr, F
8pF @ 4V, 1MHz
Voltage - DC Reverse (Vr) (Max)
600 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35 ns
Operating Temperature - Junction
-55°C ~ 150°C
Package_case
DO-219AB

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