Infineon Technologies F4100R12KS4BOSA1
- F4100R12KS4BOSA1
- Infineon Technologies
- IGBT MOD 1200V 130A 660W
- Transistors - IGBTs - Modules
- F4100R12KS4BOSA1 Datasheet
- Module
- Tray
-
Lead free / RoHS Compliant
- 4908
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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Part Number F4100R12KS4BOSA1 |
Category Transistors - IGBTs - Modules |
Manufacturer Infineon Technologies |
Description IGBT MOD 1200V 130A 660W |
Package Tray |
Series - |
Operating Temperature -40°C ~ 125°C |
Mounting Type Chassis Mount |
Package / Case Module |
Supplier Device Package Module |
Power - Max 660 W |
Configuration Three Phase Inverter |
Current - Collector (Ic) (Max) 130 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
Current - Collector Cutoff (Max) 5 mA |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 3.75V @ 15V, 100A |
Input Capacitance (Cies) @ Vce 6.8 nF @ 25 V |
Input Standard |
NTC Thermistor Yes |
Package_case Module |
F4100R12KS4BOSA1 Guarantees
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Infineon Technologies
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Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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