ON Semiconductor FCMT080N65S3
- FCMT080N65S3
- ON Semiconductor
- MOSFET N-CH 650V 38A 4TDFN
- Transistors - FETs, MOSFETs - Single
- FCMT080N65S3 Datasheet
- 4-PowerTSFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 2503
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number FCMT080N65S3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 650V 38A 4TDFN |
Package Cut Tape (CT) |
Series SuperFET® III |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 4-PowerTSFN |
Supplier Device Package 4-TDFN (8x8) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 260W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 38A (Tc) |
Rds On (Max) @ Id, Vgs 80mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id 4.5V @ 880µA |
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2765 pF @ 400 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case 4-PowerTSFN |
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