ON Semiconductor FDD107AN06LA0
- FDD107AN06LA0
- ON Semiconductor
- MOSFET N-CH 60V 3.4A/10.9A TO252
- Transistors - FETs, MOSFETs - Single
- FDD107AN06LA0 Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 25557
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number FDD107AN06LA0 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 60V 3.4A/10.9A TO252 |
Package Cut Tape (CT) |
Series PowerTrench® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package TO-252AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 25W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta), 10.9A (Tc) |
Rds On (Max) @ Id, Vgs 91mOhm @ 10.9A, 10V |
Vgs(th) (Max) @ Id 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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