ON Semiconductor FDD86113LZ
- FDD86113LZ
- ON Semiconductor
- MOSFET N-CH 100V 4.2A/5.5A DPAK
- Transistors - FETs, MOSFETs - Single
- FDD86113LZ Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 4198
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number FDD86113LZ |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 100V 4.2A/5.5A DPAK |
Package Cut Tape (CT) |
Series PowerTrench® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package TO-252AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.1W (Ta), 29W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta), 5.5A (Tc) |
Rds On (Max) @ Id, Vgs 104mOhm @ 4.2A, 10V |
Vgs(th) (Max) @ Id 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 285 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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