ON Semiconductor FDFME3N311ZT
- FDFME3N311ZT
- ON Semiconductor
- MOSFET N-CH 30V 1.8A 6MICROFET
- Transistors - FETs, MOSFETs - Single
- FDFME3N311ZT Datasheet
- 6-UFDFN Exposed Pad
- Tube
- Lead free / RoHS Compliant
- 22072
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number FDFME3N311ZT |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 30V 1.8A 6MICROFET |
Package Tube |
Series PowerTrench® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 6-UFDFN Exposed Pad |
Supplier Device Package 6-MicroFET (1.6x1.6) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.4W (Ta) |
FET Type N-Channel |
FET Feature Schottky Diode (Isolated) |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) |
Rds On (Max) @ Id, Vgs 299mOhm @ 1.6A, 4.5V |
Vgs(th) (Max) @ Id 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds 75 pF @ 15 V |
Vgs (Max) ±12V |
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V |
Package_case 6-UFDFN Exposed Pad |
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