ON Semiconductor FDP4D5N10C
- FDP4D5N10C
- ON Semiconductor
- MOSFET N-CH 100V 128A TO220-3
- Transistors - FETs, MOSFETs - Single
- FDP4D5N10C Datasheet
- TO-220-3
- Tube
-
Lead free / RoHS Compliant
- 26521
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number FDP4D5N10C |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 100V 128A TO220-3 |
Package Tube |
Series PowerTrench® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.4W (Ta), 150W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 128A (Tc) |
Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id 4V @ 310µA |
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 5065 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 |
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