FES8GT-5301HE3/45 Product Introduction:
Vishay Semiconductor - Diodes Division Part Number FES8GT-5301HE3/45(Diodes - Rectifiers - Arrays), developed and manufactured by Vishay Semiconductor - Diodes Division, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
FES8GT-5301HE3/45 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the Vishay General Semiconductor - Diodes Division FES8GT-5301HE3/45, a cutting-edge diode designed to meet the demands of modern electronic applications. With its advanced features and exceptional performance, this diode is set to revolutionize the industry.
The FES8GT-5301HE3/45 boasts a high surge capability of 1500 W, making it ideal for applications that require robust protection against voltage spikes and transients. Its low forward voltage drop of 0.55 V ensures minimal power loss, resulting in improved energy efficiency and reduced operating costs.
This diode also features a fast switching speed of 35 ns, enabling it to handle high-frequency signals with ease. Its low leakage current of 0.1 μA ensures reliable operation and prevents unnecessary power consumption.
The FES8GT-5301HE3/45 is suitable for a wide range of applications, including power supplies, industrial equipment, automotive electronics, and telecommunications. It can be used for rectification, freewheeling, and clamping in various circuit configurations.
With its compact size and high reliability, this diode is easy to integrate into existing designs and offers long-term performance stability. It is also RoHS-compliant, ensuring environmental friendliness and compliance with industry standards.
In conclusion, the Vishay General Semiconductor - Diodes Division FES8GT-5301HE3/45 is a versatile and high-performance diode that meets the demands of modern electronic applications. Its advanced features and wide range of applications make it an excellent choice for engineers and designers seeking reliable and efficient diode solutions.
Rectifiers - Arrays are assemblages composed of multiple rectifier units arranged in certain rules. The rectifier itself is an electronic device that converts alternating current (AC) to direct current (DC), and its core function is to eliminate the negative half cycle in alternating current, or convert it to a positive voltage output. Rectifier arrays integrate multiple rectifier units in parallel or in series to achieve DC output with higher efficiency, higher power, or more specific electrical characteristics.
Application
Rectifiers - Arrays are used in a wide range of applications. In the data center and telecommunications industries, to ensure uninterrupted power supply for servers and communication equipment, rectifier arrays are used to provide highly reliable DC power. In the field of renewable energy, especially in solar photovoltaic power generation systems, rectifier arrays are used to convert the direct current generated by photovoltaic panels into grid-compatible alternating current, or integrate the direct current generated by multiple photovoltaic panels to improve the output efficiency of the entire system. In addition, rectifier arrays also play an important role in electric vehicle charging stations, industrial motor drives, battery energy storage systems, and power electronics. With the development of power electronics technology, the application prospect of rectifier array will be broader.
NSR05T40P2T5G: Analysis, Manufacturer, Datasheet
In today's digital age, network services have become an integral part of every industry. Whether it's for enterprise applications or personal daily use, we all rely on high-speed, stable network connections. In this field, NSR05T40P2T5G, as an advanced network service technology, is gradually becoming the cornerstone of next-generation network services.
1N4007 diode: key component in electronic circuits
The 1N4007 rectifier diode belongs to a series of high-power rectifier diodes made of silicon materials. Its main feature is that it can withstand high peak reverse voltage and average rectifier current. Specifically, the maximum peak reverse voltage (VRM) of 1N4007 is 1000V, the average rectifier current (IF(AV)) is 1A, and it operates in the temperature range of -65°C to +175°C. In addition, its forward voltage drop (VF) is about 1V at high current, with good thermal stability, and can work st
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i