FESE16BT-E3/45 Product Introduction:
Vishay Semiconductor - Diodes Division Part Number FESE16BT-E3/45(Diodes - Rectifiers - Arrays), developed and manufactured by Vishay Semiconductor - Diodes Division, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
FESE16BT-E3/45 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the Vishay General Semiconductor - Diodes Division FESE16BT-E3/45, a high-performance Schottky rectifier diode designed to meet the demanding requirements of modern electronic applications. With its advanced technology and exceptional features, this diode offers unparalleled performance and reliability.
The FESE16BT-E3/45 features a low forward voltage drop, ensuring efficient power conversion and minimizing energy loss. Its high surge capability and low leakage current make it ideal for applications that require fast switching and high-frequency operation. Additionally, this diode has a high junction temperature rating, allowing it to withstand extreme operating conditions.
This diode is suitable for a wide range of applications, including power supplies, automotive systems, industrial equipment, and consumer electronics. It can be used in rectification, freewheeling, and reverse polarity protection circuits. Its compact and robust design makes it easy to integrate into various electronic devices.
The FESE16BT-E3/45 is manufactured using Vishay's state-of-the-art technology, ensuring consistent performance and long-term reliability. It is available in a surface-mount DPAK package, making it suitable for automated assembly processes.
In summary, the Vishay General Semiconductor - Diodes Division FESE16BT-E3/45 is a high-quality Schottky rectifier diode that offers exceptional performance and reliability. With its advanced features and wide range of applications, it is the perfect choice for demanding electronic designs.
Rectifiers - Arrays are assemblages composed of multiple rectifier units arranged in certain rules. The rectifier itself is an electronic device that converts alternating current (AC) to direct current (DC), and its core function is to eliminate the negative half cycle in alternating current, or convert it to a positive voltage output. Rectifier arrays integrate multiple rectifier units in parallel or in series to achieve DC output with higher efficiency, higher power, or more specific electrical characteristics.
Application
Rectifiers - Arrays are used in a wide range of applications. In the data center and telecommunications industries, to ensure uninterrupted power supply for servers and communication equipment, rectifier arrays are used to provide highly reliable DC power. In the field of renewable energy, especially in solar photovoltaic power generation systems, rectifier arrays are used to convert the direct current generated by photovoltaic panels into grid-compatible alternating current, or integrate the direct current generated by multiple photovoltaic panels to improve the output efficiency of the entire system. In addition, rectifier arrays also play an important role in electric vehicle charging stations, industrial motor drives, battery energy storage systems, and power electronics. With the development of power electronics technology, the application prospect of rectifier array will be broader.
1N4007 diode: key component in electronic circuits
The 1N4007 rectifier diode belongs to a series of high-power rectifier diodes made of silicon materials. Its main feature is that it can withstand high peak reverse voltage and average rectifier current. Specifically, the maximum peak reverse voltage (VRM) of 1N4007 is 1000V, the average rectifier current (IF(AV)) is 1A, and it operates in the temperature range of -65°C to +175°C. In addition, its forward voltage drop (VF) is about 1V at high current, with good thermal stability, and can work st
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