ON Semiconductor FPF2C110BI07AS2
- FPF2C110BI07AS2
- ON Semiconductor
- IGBT MODULE 650V 40A 300W F2
- Transistors - IGBTs - Modules
- FPF2C110BI07AS2 Datasheet
- 30-DIP Module
- Box
- Lead free / RoHS Compliant
- 2717
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number FPF2C110BI07AS2 |
Category Transistors - IGBTs - Modules |
Manufacturer ON Semiconductor |
Description IGBT MODULE 650V 40A 300W F2 |
Package Box |
Series - |
Operating Temperature -40°C ~ 150°C |
Mounting Type Through Hole |
Package / Case 30-DIP Module |
Supplier Device Package F2 |
Power - Max 300 W |
Configuration Half Bridge |
Current - Collector (Ic) (Max) 40 A |
Voltage - Collector Emitter Breakdown (Max) 650 V |
Current - Collector Cutoff (Max) 250 µA |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A |
Input Capacitance (Cies) @ Vce - |
Input Standard |
NTC Thermistor Yes |
Package_case 30-DIP Module |
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