Fairchild Semiconductor FQD5N20LTM
- FQD5N20LTM
- Fairchild Semiconductor
- POWER FIELD-EFFECT TRANSISTOR, 3
- Transistors - FETs, MOSFETs - Single
- FQD5N20LTM Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Bulk
- Lead free / RoHS Compliant
- 709
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number FQD5N20LTM |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Fairchild Semiconductor |
Description POWER FIELD-EFFECT TRANSISTOR, 3 |
Package Bulk |
Series QFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package TO-252AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.5W (Ta), 37W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 200 V |
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc) |
Rds On (Max) @ Id, Vgs 1.2Ohm @ 1.9A, 10V |
Vgs(th) (Max) @ Id 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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