ON Semiconductor FQP6N80C
- FQP6N80C
- ON Semiconductor
- MOSFET N-CH 800V 5.5A TO220-3
- Transistors - FETs, MOSFETs - Single
- FQP6N80C Datasheet
- TO-220-3
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 10073
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number FQP6N80C |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 800V 5.5A TO220-3 |
Package Cut Tape (CT) |
Series QFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 158W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 800 V |
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) |
Rds On (Max) @ Id, Vgs 2.5Ohm @ 2.75A, 10V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1310 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 |
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