FQP6N80C

ON Semiconductor FQP6N80C

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  • FQP6N80C
  • ON Semiconductor
  • MOSFET N-CH 800V 5.5A TO220-3
  • Transistors - FETs, MOSFETs - Single
  • FQP6N80C Datasheet
  • TO-220-3
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 10073
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
FQP6N80C
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 800V 5.5A TO220-3
Package
Cut Tape (CT)
Series
QFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
158W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Rds On (Max) @ Id, Vgs
2.5Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1310 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-220-3

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ON Semiconductor
ON Semiconductor
ON Semiconductor is driving energy efficient innovations, empowering customers to reduce global energy use. The company is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient power management, analog, ...
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