Fairchild Semiconductor FQT1N80TF_WS
- FQT1N80TF_WS
- Fairchild Semiconductor
- MOSFET N-CH 800V 0.2A SOT-223
- Transistors - FETs, MOSFETs - Single
- FQT1N80TF_WS Datasheet
- TO-261-4, TO-261AA
- TO-261-4, TO-261AA
- Lead free / RoHS Compliant
- 2483
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number FQT1N80TF_WS |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Fairchild Semiconductor |
Description MOSFET N-CH 800V 0.2A SOT-223 |
Package TO-261-4, TO-261AA |
Series QFET? |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-261-4, TO-261AA |
Supplier Device Package SOT-223-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.1W (Tc) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 800V |
Current - Continuous Drain (Id) @ 25°C 200mA (Tc) |
Rds On (Max) @ Id, Vgs 20 Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 25V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Vgs (Max) 30V |
Package_case TO-261-4, TO-261AA |
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