GA50JT06-258

GeneSiC Semiconductor GA50JT06-258

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  • GA50JT06-258
  • GeneSiC Semiconductor
  • TRANS SJT 600V 100A TO258
  • Transistors - FETs, MOSFETs - Single
  • GA50JT06-258 Datasheet
  • TO-258-3, TO-258AA
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3016
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
GA50JT06-258
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
GeneSiC Semiconductor
Description
TRANS SJT 600V 100A TO258
Package
Bulk
Series
-
Operating Temperature
-55°C ~ 225°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-258-3, TO-258AA
Supplier Device Package
TO-258
Technology
SiC (Silicon Carbide Junction Transistor)
Power Dissipation (Max)
769W (Tc)
FET Type
-
FET Feature
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Rds On (Max) @ Id, Vgs
25mOhm @ 50A
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Vgs (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
-
Package_case
TO-258-3, TO-258AA

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