GeneSiC Semiconductor GA50JT06-258
- GA50JT06-258
- GeneSiC Semiconductor
- TRANS SJT 600V 100A TO258
- Transistors - FETs, MOSFETs - Single
- GA50JT06-258 Datasheet
- TO-258-3, TO-258AA
- Bulk
- Lead free / RoHS Compliant
- 3016
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number GA50JT06-258 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer GeneSiC Semiconductor |
Description TRANS SJT 600V 100A TO258 |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 225°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-258-3, TO-258AA |
Supplier Device Package TO-258 |
Technology SiC (Silicon Carbide Junction Transistor) |
Power Dissipation (Max) 769W (Tc) |
FET Type - |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 100A (Tc) |
Rds On (Max) @ Id, Vgs 25mOhm @ 50A |
Vgs(th) (Max) @ Id - |
Gate Charge (Qg) (Max) @ Vgs - |
Input Capacitance (Ciss) (Max) @ Vds - |
Vgs (Max) - |
Drive Voltage (Max Rds On, Min Rds On) - |
Package_case TO-258-3, TO-258AA |
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