Global Power Technologies Group GP1M016A060N
- GP1M016A060N
- Global Power Technologies Group
- MOSFET N-CH 600V 16A TO3PN
- Transistors - FETs, MOSFETs - Single
- GP1M016A060N Datasheet
- TO-3P-3, SC-65-3
- TO-3P-3, SC-65-3
- Lead free / RoHS Compliant
- 11619
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number GP1M016A060N |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Global Power Technologies Group |
Description MOSFET N-CH 600V 16A TO3PN |
Package TO-3P-3, SC-65-3 |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-3P-3, SC-65-3 |
Supplier Device Package TO-3PN |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 312W (Tc) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 600V |
Current - Continuous Drain (Id) @ 25°C 16A (Tc) |
Rds On (Max) @ Id, Vgs 470 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 3039pF @ 25V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Vgs (Max) ±30V |
Package_case TO-3P-3, SC-65-3 |
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