Global Power Technologies Group GP2M004A060HG
- GP2M004A060HG
- Global Power Technologies Group
- MOSFET N-CH 600V 4A TO220
- Transistors - FETs, MOSFETs - Single
- GP2M004A060HG Datasheet
- TO-220-3
- TO-220-3
-
Lead free / RoHS Compliant
- 4787
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number GP2M004A060HG |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Global Power Technologies Group |
Description MOSFET N-CH 600V 4A TO220 |
Package TO-220-3 |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 86.2W (Tc) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 600V |
Current - Continuous Drain (Id) @ 25°C 4A (Tc) |
Rds On (Max) @ Id, Vgs 2.5 Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 545pF @ 25V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Vgs (Max) ±30V |
Package_case TO-220-3 |
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