Global Power Technologies Group GP2M007A080F
- GP2M007A080F
- Global Power Technologies Group
- MOSFET N-CH 800V 7A TO220F
- Transistors - FETs, MOSFETs - Single
- GP2M007A080F Datasheet
- TO-220-3 Full Pack
- TO-220-3 Full Pack
-
Lead free / RoHS Compliant
- 1606
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number GP2M007A080F |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Global Power Technologies Group |
Description MOSFET N-CH 800V 7A TO220F |
Package TO-220-3 Full Pack |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 Full Pack |
Supplier Device Package TO-220F |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 50W (Tc) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 800V |
Current - Continuous Drain (Id) @ 25°C 7A (Tc) |
Rds On (Max) @ Id, Vgs 1.9 Ohm @ 3.5A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 1410pF @ 25V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Vgs (Max) ±30V |
Package_case TO-220-3 Full Pack |
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