HGTP3N60B3 Product Introduction:
Harris Corporation Part Number HGTP3N60B3(Transistors - IGBTs - Single), developed and manufactured by Harris Corporation, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
HGTP3N60B3 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the Harris Corporation HGTP3N60B3, a cutting-edge power transistor that is set to revolutionize the electronics industry. With its advanced features and versatile application fields, this product is a game-changer for engineers and designers alike.
The HGTP3N60B3 boasts a high voltage rating of 600V, making it ideal for a wide range of applications. Whether you're working on power supplies, motor control systems, or lighting fixtures, this transistor can handle the demands of your project with ease. Its low on-resistance ensures efficient power transfer, reducing energy loss and maximizing performance.
One of the standout features of the HGTP3N60B3 is its fast switching speed. With a typical turn-on time of just 20 nanoseconds, this transistor enables rapid switching between states, allowing for precise control and responsiveness in your designs. This makes it perfect for applications that require quick and accurate switching, such as high-frequency inverters and switching power supplies.
Furthermore, the HGTP3N60B3 is designed to withstand high temperatures, ensuring reliability and longevity in demanding environments. Its robust construction and excellent thermal management capabilities make it suitable for use in automotive, industrial, and aerospace applications.
In summary, the Harris Corporation HGTP3N60B3 is a high-performance power transistor that offers exceptional voltage rating, low on-resistance, fast switching speed, and high-temperature tolerance. With its versatile application fields, this product is a must-have for engineers and designers looking to push the boundaries of electronic design. Upgrade your projects with the HGTP3N60B3 and experience the future of power transistors.
UGBT (Unipolar Insulated Gate Bipolar Transistor) is a new power electronic device based on improved MOSFET technology, combining the fast switching characteristics of MOSFET and the high power processing capability of IGBT. UGBT is designed to provide higher switching speeds, lower on-off losses and better thermal performance. MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a commonly used field-effect transistor with low input current, high input impedance and good linearity, making it the preferred device in many electronic circuits.
Application
UGBT (hypothetical) and MOSFET show extraordinary potential and value in their respective application fields. UGBT may dominate those industries that have the ultimate pursuit of power electronic system performance, such as new energy vehicles, smart grids, aerospace, etc., and its efficient energy conversion and control characteristics provide a strong impetus for technological innovation in these fields. MOSFET, because of its wide applicability and flexibility, has penetrated into almost every corner of electronic technology, from consumer electronics and communications equipment to industrial automation and medical electronics, highlighting its importance everywhere. In consumer electronics, MOSFETs help enable longer battery life, faster charging speeds, and more efficient energy management. In industry, they are a key force in driving motors, controlling robots and optimizing the efficiency of production lines.
FAQ about Transistors - IGBTs - Single
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1. What device is IGBT?
IGBT is an Insulated Gate Bipolar Transistor, which is a composite fully controlled voltage-driven power semiconductor device.
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2. What is the difference between MOS tube and IGBT tube?
IGBT generally has a high voltage rating and strong current resistance, but has high switching losses. Therefore, IGBT is mainly used in high-voltage and high-power applications.
MOSFET has lower voltage and current resistance than IGBT, but its switching loss is small, so the frequency can be higher. Therefore, MOSFET is mainly used in low-voltage, low-power and high-frequency applications.
If you are making a 220V converter, such as a switching power supply, you can choose MOSFET; if you work on the power grid, many 10kV grid-connected equipment uses IGBT.
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3. What is the working principle of igbt tube?
IGBT (InsulatedGateBipolarTransistor) is a bipolar insulated gate thyristor. It is composed of an N-channel field effect transistor and a P-channel field effect transistor. The polarity of the N-channel transistor is the same as the polarity of the P-channel transistor. Sex is the opposite. The working principle of IGBT is that when the gate voltage of IGBT reaches a certain threshold, the N-channel transistor of IGBT will turn on. At this time, the IGBT will change from the off state to the on state, thereby causing the P channel of the IGBT to turn on. The channel transistor is also turned on, thereby increasing the output current of the IGBT, thereby realizing the power control of the IGBT.