ON Semiconductor HGTP5N120BND
- HGTP5N120BND
- ON Semiconductor
- IGBT 1200V 21A 167W TO220AB
- Transistors - IGBTs - Single
- HGTP5N120BND Datasheet
- TO-220-3
- Tape & Reel (TR)
-
Lead free / RoHS Compliant
- 29261
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number HGTP5N120BND |
Category Transistors - IGBTs - Single |
Manufacturer ON Semiconductor |
Description IGBT 1200V 21A 167W TO220AB |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220-3 |
Power - Max 167 W |
Input Type Standard |
Reverse Recovery Time (trr) 65 ns |
Current - Collector (Ic) (Max) 21 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
IGBT Type NPT |
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 5A |
Gate Charge 53 nC |
Td (on/off) @ 25°C 22ns/160ns |
Test Condition 960V, 5A, 25Ohm, 15V |
Current - Collector Pulsed (Icm) 40 A |
Switching Energy 450µJ (on), 390µJ (off) |
Package_case TO-220-3 |
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