HSG1002VE-TL-E

Renesas Electronics America Inc HSG1002VE-TL-E

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  • HSG1002VE-TL-E
  • Renesas Electronics America Inc
  • RF 0.035A C BAND GERMANIUM NPN
  • Transistors - Bipolar (BJT) - RF
  • HSG1002VE-TL-E Datasheet
  • 4-SMD, Gull Wing
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 19549
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
HSG1002VE-TL-E
Category
Transistors - Bipolar (BJT) - RF
Manufacturer
Renesas Electronics America Inc
Description
RF 0.035A C BAND GERMANIUM NPN
Package
Bulk
Series
-
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
4-SMD, Gull Wing
Supplier Device Package
4-MFPAK
Gain
8dB ~ 19.5dB
Power - Max
200mW
Transistor Type
NPN
Current - Collector (Ic) (Max)
35mA
Voltage - Collector Emitter Breakdown (Max)
3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 5mA, 2V
Frequency - Transition
38GHz
Noise Figure (dB Typ @ f)
0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Package_case
4-SMD, Gull Wing

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Renesas Electronics America Inc
Renesas Electronics America Inc
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