Renesas Electronics America Inc HSG1002VE-TL-E
- HSG1002VE-TL-E
- Renesas Electronics America Inc
- RF 0.035A C BAND GERMANIUM NPN
- Transistors - Bipolar (BJT) - RF
- HSG1002VE-TL-E Datasheet
- 4-SMD, Gull Wing
- Bulk
- Lead free / RoHS Compliant
- 19549
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number HSG1002VE-TL-E |
Category Transistors - Bipolar (BJT) - RF |
Manufacturer Renesas Electronics America Inc |
Description RF 0.035A C BAND GERMANIUM NPN |
Package Bulk |
Series - |
Operating Temperature - |
Mounting Type Surface Mount |
Package / Case 4-SMD, Gull Wing |
Supplier Device Package 4-MFPAK |
Gain 8dB ~ 19.5dB |
Power - Max 200mW |
Transistor Type NPN |
Current - Collector (Ic) (Max) 35mA |
Voltage - Collector Emitter Breakdown (Max) 3.5V |
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 2V |
Frequency - Transition 38GHz |
Noise Figure (dB Typ @ f) 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz |
Package_case 4-SMD, Gull Wing |
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