IGC11T120T8LX1SA1 Product Introduction:
Infineon Technologies Part Number IGC11T120T8LX1SA1(Transistors - IGBTs - Single), developed and manufactured by Infineon Technologies, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
IGC11T120T8LX1SA1 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the Infineon Technologies IGC11T120T8LX1SA1, a cutting-edge power module designed to revolutionize the field of energy conversion. This innovative product combines advanced technology with exceptional performance, making it the ideal choice for a wide range of applications.
The IGC11T120T8LX1SA1 boasts a compact and robust design, ensuring optimal efficiency and reliability. With a voltage rating of 1200V and a current rating of 11A, this power module offers exceptional power density, allowing for high power conversion in a small form factor. Its low on-state resistance and low switching losses further enhance its efficiency, resulting in reduced energy consumption and increased cost savings.
This power module is equipped with advanced protection features, including short-circuit protection and over-temperature protection, ensuring the safety and longevity of the system. Its high thermal conductivity and low thermal resistance enable efficient heat dissipation, preventing overheating and ensuring stable operation even in demanding environments.
The IGC11T120T8LX1SA1 finds its application in various fields, including industrial automation, renewable energy systems, and electric vehicle charging stations. Its high power density and efficiency make it an excellent choice for motor drives, inverters, and power supplies. Additionally, its compact size and robust design make it suitable for space-constrained applications.
In conclusion, the Infineon Technologies IGC11T120T8LX1SA1 power module offers exceptional performance, advanced protection features, and a compact design, making it the perfect solution for energy conversion in a wide range of applications.
UGBT (Unipolar Insulated Gate Bipolar Transistor) is a new power electronic device based on improved MOSFET technology, combining the fast switching characteristics of MOSFET and the high power processing capability of IGBT. UGBT is designed to provide higher switching speeds, lower on-off losses and better thermal performance. MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a commonly used field-effect transistor with low input current, high input impedance and good linearity, making it the preferred device in many electronic circuits.
Application
UGBT (hypothetical) and MOSFET show extraordinary potential and value in their respective application fields. UGBT may dominate those industries that have the ultimate pursuit of power electronic system performance, such as new energy vehicles, smart grids, aerospace, etc., and its efficient energy conversion and control characteristics provide a strong impetus for technological innovation in these fields. MOSFET, because of its wide applicability and flexibility, has penetrated into almost every corner of electronic technology, from consumer electronics and communications equipment to industrial automation and medical electronics, highlighting its importance everywhere. In consumer electronics, MOSFETs help enable longer battery life, faster charging speeds, and more efficient energy management. In industry, they are a key force in driving motors, controlling robots and optimizing the efficiency of production lines.
FAQ about Transistors - IGBTs - Single
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1. Is it feasible to convert an IGBT single tube into a module?
It is feasible to convert an IGBT single tube into a module because the IGBT module is a composite device composed of multiple IGBT single tubes and has higher reliability and stability. IGBT modules are usually used in high voltage and high current applications, while IGBT single tubes are suitable for lower voltage and current applications.
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2. igbt pin definition
G is the gate or gate, c is the collector, and e is the emitter.
The circuit symbol of an N-type IGBT tube with a damping diode is to add a diode symbol between the c and e poles of the above symbol. The negative end of the diode is connected to the c pole, and the positive end is connected to the e pole, as shown in the figure below. Show. The order of the pins of common IGBT tubes is the same as that of common high-power triodes, that is, the pins are facing downwards, and the markings are facing you. From left to right, they are i] pole (G), collector (c), and emitter. (e).
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3. What is the working principle of igbt tube?
IGBT (InsulatedGateBipolarTransistor) is a bipolar insulated gate thyristor. It is composed of an N-channel field effect transistor and a P-channel field effect transistor. The polarity of the N-channel transistor is the same as the polarity of the P-channel transistor. Sex is the opposite. The working principle of IGBT is that when the gate voltage of IGBT reaches a certain threshold, the N-channel transistor of IGBT will turn on. At this time, the IGBT will change from the off state to the on state, thereby causing the P channel of the IGBT to turn on. The channel transistor is also turned on, thereby increasing the output current of the IGBT, thereby realizing the power control of the IGBT.