IGTH20N50 Product Introduction:
Harris Corporation Part Number IGTH20N50(Transistors - IGBTs - Single), developed and manufactured by Harris Corporation, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
IGTH20N50 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the Harris Corporation IGTH20N50, a cutting-edge power transistor that revolutionizes the field of electronics. With its advanced features and versatile application fields, this product is set to redefine the way we use power transistors.
The IGTH20N50 boasts a high voltage rating of 500V, making it ideal for a wide range of applications that require robust power handling capabilities. Its low on-resistance ensures efficient power transfer, minimizing energy loss and maximizing performance. Additionally, the IGTH20N50 features a high current rating of 20A, enabling it to handle heavy loads with ease.
This power transistor is designed to excel in various application fields. In the automotive industry, it can be used in electric vehicle powertrains, battery management systems, and motor control units. In the industrial sector, it is perfect for power supplies, inverters, and motor drives. Furthermore, the IGTH20N50 is also suitable for renewable energy systems, such as solar inverters and wind turbine generators.
The Harris Corporation IGTH20N50 is built to withstand harsh operating conditions, ensuring reliability and longevity. Its compact size and easy-to-mount package make it convenient for integration into existing systems. With its exceptional performance and wide range of applications, the IGTH20N50 is the power transistor of choice for engineers and designers seeking to optimize their electronic systems.
Experience the future of power transistors with the Harris Corporation IGTH20N50. Upgrade your electronics and unlock new possibilities today.
UGBT (Unipolar Insulated Gate Bipolar Transistor) is a new power electronic device based on improved MOSFET technology, combining the fast switching characteristics of MOSFET and the high power processing capability of IGBT. UGBT is designed to provide higher switching speeds, lower on-off losses and better thermal performance. MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a commonly used field-effect transistor with low input current, high input impedance and good linearity, making it the preferred device in many electronic circuits.
Application
UGBT (hypothetical) and MOSFET show extraordinary potential and value in their respective application fields. UGBT may dominate those industries that have the ultimate pursuit of power electronic system performance, such as new energy vehicles, smart grids, aerospace, etc., and its efficient energy conversion and control characteristics provide a strong impetus for technological innovation in these fields. MOSFET, because of its wide applicability and flexibility, has penetrated into almost every corner of electronic technology, from consumer electronics and communications equipment to industrial automation and medical electronics, highlighting its importance everywhere. In consumer electronics, MOSFETs help enable longer battery life, faster charging speeds, and more efficient energy management. In industry, they are a key force in driving motors, controlling robots and optimizing the efficiency of production lines.
FAQ about Transistors - IGBTs - Single
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1. igbt pin definition
G is the gate or gate, c is the collector, and e is the emitter.
The circuit symbol of an N-type IGBT tube with a damping diode is to add a diode symbol between the c and e poles of the above symbol. The negative end of the diode is connected to the c pole, and the positive end is connected to the e pole, as shown in the figure below. Show. The order of the pins of common IGBT tubes is the same as that of common high-power triodes, that is, the pins are facing downwards, and the markings are facing you. From left to right, they are i] pole (G), collector (c), and emitter. (e).
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2. What is the difference between MOS tube and IGBT tube?
IGBT generally has a high voltage rating and strong current resistance, but has high switching losses. Therefore, IGBT is mainly used in high-voltage and high-power applications.
MOSFET has lower voltage and current resistance than IGBT, but its switching loss is small, so the frequency can be higher. Therefore, MOSFET is mainly used in low-voltage, low-power and high-frequency applications.
If you are making a 220V converter, such as a switching power supply, you can choose MOSFET; if you work on the power grid, many 10kV grid-connected equipment uses IGBT.
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3. What is the working principle of igbt tube?
IGBT (InsulatedGateBipolarTransistor) is a bipolar insulated gate thyristor. It is composed of an N-channel field effect transistor and a P-channel field effect transistor. The polarity of the N-channel transistor is the same as the polarity of the P-channel transistor. Sex is the opposite. The working principle of IGBT is that when the gate voltage of IGBT reaches a certain threshold, the N-channel transistor of IGBT will turn on. At this time, the IGBT will change from the off state to the on state, thereby causing the P channel of the IGBT to turn on. The channel transistor is also turned on, thereby increasing the output current of the IGBT, thereby realizing the power control of the IGBT.