IHW20N135R5XKSA Product Introduction:
Infineon Technologies Part Number IHW20N135R5XKSA(Transistors - IGBTs - Single), developed and manufactured by Infineon Technologies, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
IHW20N135R5XKSA is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the Infineon Technologies IHW20N135R5XKSA, a cutting-edge power module designed to revolutionize the field of industrial applications. With its advanced features and exceptional performance, this product is set to redefine power management in various industries.
The IHW20N135R5XKSA boasts a high voltage rating of 1350V, making it ideal for demanding applications that require robust power handling capabilities. Its low on-state resistance ensures efficient power conversion, reducing energy losses and enhancing overall system efficiency. Additionally, the module's compact design and integrated driver circuitry simplify installation and reduce system complexity.
This power module is specifically designed for use in a wide range of industrial applications. From motor drives and renewable energy systems to welding equipment and uninterruptible power supplies, the IHW20N135R5XKSA excels in delivering reliable and high-performance power management solutions. Its exceptional thermal performance ensures reliable operation even in harsh environments, making it suitable for industrial applications that demand durability and longevity.
Infineon Technologies has always been at the forefront of innovation, and the IHW20N135R5XKSA is no exception. With its advanced features, exceptional performance, and wide range of application fields, this power module is set to revolutionize the industrial sector. Experience the future of power management with the Infineon Technologies IHW20N135R5XKSA.
UGBT (Unipolar Insulated Gate Bipolar Transistor) is a new power electronic device based on improved MOSFET technology, combining the fast switching characteristics of MOSFET and the high power processing capability of IGBT. UGBT is designed to provide higher switching speeds, lower on-off losses and better thermal performance. MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a commonly used field-effect transistor with low input current, high input impedance and good linearity, making it the preferred device in many electronic circuits.
Application
UGBT (hypothetical) and MOSFET show extraordinary potential and value in their respective application fields. UGBT may dominate those industries that have the ultimate pursuit of power electronic system performance, such as new energy vehicles, smart grids, aerospace, etc., and its efficient energy conversion and control characteristics provide a strong impetus for technological innovation in these fields. MOSFET, because of its wide applicability and flexibility, has penetrated into almost every corner of electronic technology, from consumer electronics and communications equipment to industrial automation and medical electronics, highlighting its importance everywhere. In consumer electronics, MOSFETs help enable longer battery life, faster charging speeds, and more efficient energy management. In industry, they are a key force in driving motors, controlling robots and optimizing the efficiency of production lines.
D882 Transistor Pinout, Equivalent, Uses and Datasheet
What is a D882 Transistor? The D882 is a popular NPN bipolar junction transistor (BJT) from the "D" series. It's designed for general-purpose amplification and switching in electronic circuits.
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
BC547/BC548 transistor pin configuration, data sheet and application characteristics
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What is a BC547 transistor?
BC547 is a common NPN bipolar transistor, so it is widely used in electronic circuits when the base pin is connected to ground, the collector and emitter will remain open circuit (reverse biased), while when the base pin is grounded When a signal is provided, the collector and emitter are turned off (forward biased).