Infineon Technologies IMBG120R030M1HXTMA1
- IMBG120R030M1HXTMA1
- Infineon Technologies
- TRANS SJT N-CH 1.2KV 56A TO263
- Transistors - FETs, MOSFETs - Single
- IMBG120R030M1HXTMA1 Datasheet
- TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 2271
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IMBG120R030M1HXTMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description TRANS SJT N-CH 1.2KV 56A TO263 |
Package Cut Tape (CT) |
Series CoolSiC™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Supplier Device Package PG-TO263-7-12 |
Technology SiC (Silicon Carbide Junction Transistor) |
Power Dissipation (Max) 300W (Tc) |
FET Type N-Channel |
FET Feature Standard |
Drain to Source Voltage (Vdss) 1200 V |
Current - Continuous Drain (Id) @ 25°C 56A (Tc) |
Rds On (Max) @ Id, Vgs 41mOhm @ 25A, 18V |
Vgs(th) (Max) @ Id 5.7V @ 11.5mA |
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V |
Input Capacitance (Ciss) (Max) @ Vds 2290 pF @ 800 V |
Vgs (Max) +18V, -15V |
Drive Voltage (Max Rds On, Min Rds On) - |
Package_case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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