Infineon Technologies IPAN60R360P7SXKSA1
- IPAN60R360P7SXKSA1
- Infineon Technologies
- MOSFET N-CH 650V 9A TO220
- Transistors - FETs, MOSFETs - Single
- IPAN60R360P7SXKSA1 Datasheet
- TO-220-3 Full Pack
- Bulk
- Lead free / RoHS Compliant
- 2547
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IPAN60R360P7SXKSA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 650V 9A TO220 |
Package Bulk |
Series CoolMOS™ P7 |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 Full Pack |
Supplier Device Package PG-TO220 Full Pack |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 22W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 9A (Tc) |
Rds On (Max) @ Id, Vgs 360mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id 4V @ 140µA |
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 555 pF @ 400 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 Full Pack |
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