Infineon Technologies IPAW60R280CEXKSA1
- IPAW60R280CEXKSA1
- Infineon Technologies
- MOSFET N-CH 600V 19.3A TO220
- Transistors - FETs, MOSFETs - Single
- IPAW60R280CEXKSA1 Datasheet
- TO-220-3 Full Pack, Variant
- Tube
- Lead free / RoHS Compliant
- 25399
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IPAW60R280CEXKSA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 600V 19.3A TO220 |
Package Tube |
Series CoolMOS™ |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 Full Pack, Variant |
Supplier Device Package PG-TO220 Full Pack, Wide Creepage |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 32W (Tc) |
FET Type N-Channel |
FET Feature Super Junction |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 19.3A (Tc) |
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 430µA |
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 100 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 Full Pack, Variant |
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