Infineon Technologies IPB042N10N3 G
- IPB042N10N3 G
- Infineon Technologies
- MOSFET N-CH 100V 100A TO263-3
- Transistors - FETs, MOSFETs - Single
- IPB042N10N3 G Datasheet
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
-
Lead free / RoHS Compliant
- 858
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IPB042N10N3 G |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 100V 100A TO263-3 |
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Series OptiMOS? |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package PG-TO263-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 214W (Tc) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 100V |
Current - Continuous Drain (Id) @ 25°C 100A (Tc) |
Rds On (Max) @ Id, Vgs 4.2 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 8410pF @ 50V |
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
Vgs (Max) 20V |
Package_case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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