Infineon Technologies IPB072N15N3GATMA1
- IPB072N15N3GATMA1
- Infineon Technologies
- MOSFET N-CH 150V 100A TO263-3
- Transistors - FETs, MOSFETs - Single
- IPB072N15N3GATMA1 Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 6527
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IPB072N15N3GATMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 150V 100A TO263-3 |
Package Tape & Reel (TR) |
Series OptiMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package PG-TO263-3-2 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 300W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 150 V |
Current - Continuous Drain (Id) @ 25°C 100A (Tc) |
Rds On (Max) @ Id, Vgs 7.2mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id 4V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 5470 pF @ 75 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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