Infineon Technologies IPB083N10N3 G
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- IPB083N10N3 G
- Infineon Technologies
- MOSFET N-CH 100V 80A TO263-3
- Transistors - FETs, MOSFETs - Single
- IPB083N10N3 G Datasheet
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
-
Lead free / RoHS Compliant - 3030
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number IPB083N10N3 G |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 100V 80A TO263-3 |
| Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Series OptiMOS? |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package PG-TO263-2 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 125W (Tc) |
| FET Type N-Channel |
| Drain to Source Voltage (Vdss) 100V |
| Current - Continuous Drain (Id) @ 25°C 80A (Tc) |
| Rds On (Max) @ Id, Vgs 8.3 mOhm @ 73A, 10V |
| Vgs(th) (Max) @ Id 3.5V @ 75µA |
| Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 50V |
| Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
| Vgs (Max) 20V |
| Package_case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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