Infineon Technologies IPB50R199CPATMA1
- IPB50R199CPATMA1
- Infineon Technologies
- MOSFET N-CH 550V 17A TO263-3
- Transistors - FETs, MOSFETs - Single
- IPB50R199CPATMA1 Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
- Lead free / RoHS Compliant
- 9283
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IPB50R199CPATMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 550V 17A TO263-3 |
Package Tube |
Series CoolMOS™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package PG-TO263-3-2 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 139W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 550 V |
Current - Continuous Drain (Id) @ 25°C 17A (Tc) |
Rds On (Max) @ Id, Vgs 199mOhm @ 9.9A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 660µA |
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 100 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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