IPB60R099C6ATMA1

Infineon Technologies IPB60R099C6ATMA1

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  • IPB60R099C6ATMA1
  • Infineon Technologies
  • MOSFET N-CH 600V 37.9A D2PAK
  • Transistors - FETs, MOSFETs - Single
  • IPB60R099C6ATMA1 Datasheet
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1625
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IPB60R099C6ATMA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 600V 37.9A D2PAK
Package
Tube
Series
CoolMOS™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
278W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
37.9A (Tc)
Rds On (Max) @ Id, Vgs
99mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs
119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2660 pF @ 100 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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