Infineon Technologies IPB60R950C6ATMA1
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- IPB60R950C6ATMA1
- Infineon Technologies
- MOSFET N-CH 600V 4.4A D2PAK
- Transistors - FETs, MOSFETs - Single
- IPB60R950C6ATMA1 Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 24479
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number IPB60R950C6ATMA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 600V 4.4A D2PAK |
| Package Cut Tape (CT) |
| Series CoolMOS™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package PG-TO263-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 37W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs 950mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id 3.5V @ 130µA |
| Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 100 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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