Infineon Technologies IPB80N04S403ATMA1
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- IPB80N04S403ATMA1
- Infineon Technologies
- MOSFET N-CH 40V 80A TO263-3-2
- Transistors - FETs, MOSFETs - Single
- IPB80N04S403ATMA1 Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 7488
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number IPB80N04S403ATMA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 40V 80A TO263-3-2 |
| Package Cut Tape (CT) |
| Series OptiMOS™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package PG-TO263-3-2 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 94W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 40 V |
| Current - Continuous Drain (Id) @ 25°C 80A (Tc) |
| Rds On (Max) @ Id, Vgs 3.3mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id 4V @ 53µA |
| Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 5260 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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