Infineon Technologies IPB80N06S4L07ATMA2
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- IPB80N06S4L07ATMA2
- Infineon Technologies
- MOSFET N-CH 60V 80A TO263-3
- Transistors - FETs, MOSFETs - Single
- IPB80N06S4L07ATMA2 Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
-
Lead free / RoHS Compliant - 20655
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
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| Part Number IPB80N06S4L07ATMA2 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 60V 80A TO263-3 |
| Package Tube |
| Series Automotive, AEC-Q101, OptiMOS™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package PG-TO263-3-2 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 79W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 60 V |
| Current - Continuous Drain (Id) @ 25°C 80A (Tc) |
| Rds On (Max) @ Id, Vgs 6.7mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id 2.2V @ 40µA |
| Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 5680 pF @ 25 V |
| Vgs (Max) ±16V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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