Infineon Technologies IPD04N03LB G
- IPD04N03LB G
- Infineon Technologies
- MOSFET N-CH 30V 50A TO252-3
- Transistors - FETs, MOSFETs - Single
- IPD04N03LB G Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Bulk
- Lead free / RoHS Compliant
- 1413
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IPD04N03LB G |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 30V 50A TO252-3 |
Package Bulk |
Series OptiMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package PG-TO252-3-11 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 115W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 50A (Tc) |
Rds On (Max) @ Id, Vgs 4.1mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id 2V @ 70µA |
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds 5200 pF @ 15 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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