Infineon Technologies IPD50R1K4CEBTMA1
- IPD50R1K4CEBTMA1
- Infineon Technologies
- MOSFET N-CH 500V 3.1A TO252-3
- Transistors - FETs, MOSFETs - Single
- IPD50R1K4CEBTMA1 Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 3124
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number IPD50R1K4CEBTMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 500V 3.1A TO252-3 |
Package Tape & Reel (TR) |
Series CoolMOS™ CE |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package PG-TO252-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 25W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 500 V |
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc) |
Rds On (Max) @ Id, Vgs 1.4Ohm @ 900mA, 13V |
Vgs(th) (Max) @ Id 3.5V @ 70µA |
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 178 pF @ 100 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 13V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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