Infineon Technologies IPD65R1K4CFDBTMA1
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- IPD65R1K4CFDBTMA1
- Infineon Technologies
- MOSFET N-CH 650V 2.8A TO252-3
- Transistors - FETs, MOSFETs - Single
- IPD65R1K4CFDBTMA1 Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 22590
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number IPD65R1K4CFDBTMA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 650V 2.8A TO252-3 |
| Package Cut Tape (CT) |
| Series CoolMOS™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package PG-TO252-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 28.4W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs 1.4Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id 4.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 262 pF @ 100 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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