IPD65R660CFDAATMA1

Infineon Technologies IPD65R660CFDAATMA1

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  • IPD65R660CFDAATMA1
  • Infineon Technologies
  • MOSFET N-CH 650V 6A TO252-3
  • Transistors - FETs, MOSFETs - Single
  • IPD65R660CFDAATMA1 Datasheet
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1053
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IPD65R660CFDAATMA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 650V 6A TO252-3
Package
Tube
Series
Automotive, AEC-Q101, CoolMOS™
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
62.5W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
660mOhm @ 3.22A, 10V
Vgs(th) (Max) @ Id
4.5V @ 214.55µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
543 pF @ 100 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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